TOKYO, Jan 10 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation today announced the launch of “π-MOS IX,” a new series of 600V planar MOSFET. Mass production starts today.
With an optimized chip design, the π-MOS IX series provides 5dB lower[1] peak EMI noise than the current π-MOS VII series, while maintaining the same level of efficiency. It offers greater design freedom and therefore helps reduce design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated DC current, making it simple to replace existing MOSFET.
Toshiba Electronic Devices & Storage Corporation will expand the π-MOS IX series with the addition of more 600V devices, plus 500V and 650V devices.
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