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| Toshiba: a 1200V silicon carbide (SiC) MOSFET TW070J120B for industrial equipment including large capacity power supply. (Graphic: Business Wire) |
KUALA LUMPUR, Oct 19 -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched ‘TW070J120B’, a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply, with shipments beginning today.
The power MOSFET using the SiC, a new material, achieves high voltage resistance, high-speed switching, and low On-resistance compared to conventional silicon (Si) MOSFET, IGBT products, therefore contributing to lower power consumption and system downsizing.
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