KIOXIA LAUNCHES UFS VER. 3.1 EMBEDDED FLASH MEMORY DEVICES WITH QLC TECHNOLOGY

Kioxia Corporation: Proof of Concept (PoC) Samples of UFS Ver. 3.1 Embedded Flash Memory Devices with Quad-level-cell (QLC) Technology (Photo: Business Wire)

 KUALA LUMPUR, Jan 19 (Bernama) -- Kioxia Corporation, a world leader in memory solutions, has announced the launch of Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices utilising its innovative 4-bit per cell quad-level-cell (QLC) technology.

For applications needing high density, such as cutting-edge smartphones, Kioxia’s QLC technology enables the capability to achieve the highest densities available in a single package, according to a statement.

Kioxia’s UFS proof of concept (PoC) device is a 512 gigabyte prototype that utilises the company’s 1 terabit (128 gigabyte) BiCS FLASH™ 3D flash memory with QLC technology, and is now sampling to OEM customers.

The PoC device is designed to meet the increasing performance and density requirements of mobile applications driven by higher resolution images, 5G networks, 4K plus video and the like.

Kioxia is committed to uplifting the world with ‘memory’ by offering products, services and systems that create choice for customers and memory-based value for society.

Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive and data centres.

-- BERNAMA