TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION ADDS SECOND-GENERATION 650V SIC SCHOTTKY BARRIER DIODES IN DPAK SURFACE-MOUNT TYPE PACKAGE

Second-generation devices provide improved surge peak forward current and figure of merit, now in a surface-mount type package

TOKYO, Oct 17 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Volume shipments start today.

Until now, TDSC has focused on SiC SBDs in through-hole packages. The addition of TDSC’s first SiC SBDs in surface-mount packages (nicknamed DPAK) meets customer needs to reduce system size and thickness.

The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (I_FSM) and figure of merit (V_F•Q_c^*1). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.

TDSC will continue to expand its product portfolio in order to help improve the efficiency and reduce the size of communications equipment, servers, inverters and other products.  

http://mrem.bernama.com/viewsm.php?idm=30321