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| Toshiba: a 100V N-channel power MOSFET "TPH3R10AQM" fabricated with Toshiba’s latest-generation process, U-MOS X-H. (Graphic: Business Wire) |
KUALA LUMPUR, June 30 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched “TPH3R10AQM”, a 100V N-channel power MOSFET fabricated with its latest-generation process, U-MOS X-H.
According to Toshiba in a statement, the product targets applications such as switching circuits and hot swap circuits on the power lines of industrial equipment used for data centres and communications base stations.
TPH3R10AQM has industry-leading 3.1 megaohm (mΩ) maximum drain-source On-resistance, 16 per cent lower than Toshiba’s 100 volt (V) product, “TPH3R70APL”, which uses the earlier generation process.
By the same comparison, TPH3R10AQM has expanded its safe operating area by 76 per cent making it suitable for linear mode operation. Reducing the On-resistance and expanding the linear operating range in the safe operating area reduce the number of parallel connections.
Furthermore, its gate threshold voltage range of 2.5V to 3.5V, makes it less likely to malfunction due to gate voltage noise. The new product uses the highly footprint compatible SOP Advance(N) package.
Toshiba will continue to expand its line-up of power MOSFETs that can increase the efficiency of power supplies by reducing loss, and help lower equipment power consumption.
-- BERNAMA
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