Toshiba Unveils 3rd Generation SiC Schottky Barrier Diodes For Industrial Equipment

 

Siri TRSxxx65H, diod perintang 650V SiC Schottky generasi ketiga. (Grafik: Business Wire) 

KUALA LUMPUR, July 13 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched the "TRSxxx65H series", its third and latest generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment.

According to Toshiba in a statement, volume shipments of the first 12 products, all 650 volt (V), have started, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

The new products use a new metal in a third generation SiC SBD chip that optimises the junction barrier Schottky (JBS) structure of the second generation products.

They improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.

The new products target applications such as switching power supplies, electric vehicle charging stations and photovoltaic inverters.

Toshiba, a supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system large-scale integrations (LSIs) and hard disk drive (HDD) products.

-- BERNAMA